Goryn’ A. M., Stadnyk Yu.V., Romaka L.P., Romaka V.V., Melnychen

THE EFFECT n-HfNiSn SEMICONDUCTOR DOPING WITH Sb DONOR IMPURITY ON THERMOELECTRIC PROPERTIES OF ALLOYS
Ivan Franko Lviv National University, Kyrylo and Mefodii Str., Lviv, 679005, Ukraine

The effect of n-HfNiSn semiconductor doping with donor impurity of antimony on thermoelectric power factor is studied. Crystal and electronic structure, temperature dependences of electrical resistivity and thermoelectric coefficient in the temperature range 80 – 380 K of substitutional solid solution HfNiSn_1-õSb_õ (õ = 0  0.1) are investigated. Insignificant substitution of Sn with Sb (x = 0.005) is shown to cause the transition from activated conductivity to metallic one. In such concentration range of substitutional element significant increase (more than by a factor of three) in thermoelectric power factor of substitutional solid solution alloy is achieved.

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