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Sabo E.P.


TECHNOLOGY OF CHALCOGEN THERMOELEMENTS. PHYSICAL FOUNDATIONS. CHAPTER 3. TECHNOLOGY OF THERMOELEMENT LEGS CONNECTION. 3.2. Combined pressing
Sukhumi Physics and Technical Institute,665, Kodorsky Road, Sukhumi, 384914, Abkhasia




Sabo E.P.

$10.00
Freik D.M., Dykun M.I., Boryk V.V.


NEW ASPECTS OF PROPERTIES OPTIMIZATION OF THERMOELECTRIC MATERIALS BASED ON LEAD TELLURIDE
Physics-Chemical Institute of V.Stephanyk Prykarpatsky National University, 57, T.Shevchenko Str., Ivano-Frankivsk, 56308, Ukraine

Analysis of new physical and technological approaches to improvement of thermoelectric parameters of lead telluride based materials both for middle (500 – 700 K) and low-temperature (150 – 200 K) ranges is presented. It is shown that optimal properties of PbTe-Sb2Te3 solid solution are determined by a considerable reduction in thermal conductivity and of PbTexSn xTe – by increase in electric conductivity and activity of cation vacancies. Noncentral lo



Freik D.M., Dykun M.I., Boryk V.V.

$10.00
Goryn’ A. M., Stadnyk Yu.V., Romaka L.P., Romaka V.V., Melny


THE EFFECT n-HfNiSn SEMICONDUCTOR DOPING WITH Sb DONOR IMPURITY ON THERMOELECTRIC PROPERTIES OF ALLOYS
Ivan Franko Lviv National University, Kyrylo and Mefodii Str., Lviv, 679005, Ukraine

The effect of n-HfNiSn semiconductor doping with donor impurity of antimony on thermoelectric power factor is studied. Crystal and electronic structure, temperature dependences of electrical resistivity and thermoelectric coefficient in the temperature range 80 – 380 K of substitutional solid solution HfNiSn1-õSbõ (õ = 0  0.1) are investigated. Insignificant substitution of Sn with Sb (x = 0.005) is shown to cause the transition from activated conductivity to metallic one. In su



Goryn’ A. M., Stadnyk Yu.V., Romaka L.P., Romaka V.V., Melnychen

$10.00
Glukhov K.E., Kharkhalis L.Yu., Sznajder M.


ANISOTROPY OF THE PHYSICAL PARAMETERS IN THE CdSb-ZnSb SOLID SOLUTIONS
1Institute for Physics and Chemistry of the Solid State, Uzhgorod National University, Volishyn Str., 54, Uzhgorod, 88000, Ukraine;
2Institute of Physics, University of Rzeszów , Rejtana Str., 16à, Rzeszów, 35-310, Poland

First principles calculations of the band structure and anisotropy parameters of the Cd0.5Zn0.5Sb ordered solid solutions have been carried out. Estimations of the effective masses in conduction and valence bands of these solid solutions have been obtained. Also we demonstrated that a change of anisotropy of the effective mass tensor components leads to the possibility o



Glukhov K.E., Kharkhalis L.Yu., Sznajder M.

$10.00
Aliev F.F., Dzhafarov M.B., Saddinova A.A., Godzhaev E.M.


THERMOELECTRIC EFFICIENCY ENHANCEMENT USING Ag AND Se ADDITIVES IN Ag2Se THERMOELECTRIC AND THERMOELECTROKINETIC PHENOMENA IN AQUEOUS SOLUTIONS OF IONIC COMPOUNDS
1 Institute of Physics, Azerbaijan NAS, H. Javid avenue, 33, Baku, AZ1143, Azerbaijan;
2Azerbaijan Technical University, H. Javid avenue, 25, Baku, AZ1073, Azerbaijan

In the temperature range of 100 – 300 K, the thermoelectric power and the figure of merit z in Ag2Se based on temperature dependences of the electrical conductivity (σ), the thermopower (α0) and the thermal conductivity ( ), were calculated. An excess of Ag and Se in Ag2Se is shown



Aliev F.F., Dzhafarov M.B., Saddinova A.A., Godzhaev E.M.

$10.00
Radchenko Ì.V., Lashkarev G.V.


THERMOELECTROMOTIVE FORCE AS HIGHLY INFORMATIVE MEANS FOR CHARACTERIZATION OF SEMICONDUCTORS (Review)
I.M. Frantsevich Institute for Problems of Materials Science NASU , 3, Krzhyzhanovsky Str., 03680, Kyiv

The possibilities of the thermoelectromotive force study as a method for comprehensive investigation of semiconductors are shown. The thermoEMF behaviour of semiconductors, both undoped and doped with magnetic impurities, is considered. In particular, thermoelectric studies of magnetically diluted semiconductors make it possible to obtain information on the uniformity of magnetic component distribution in matrix and on the character of exchange interaction between current carriers and magnetic ions.



Radchenko Ì.V., Lashkarev G.V.

$10.00